FGB40N60SM
FGB40N60SM
Артикул:
FGB40N60SM
Описание:
FGB40N60SM
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.3 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
80 A
Power Dispation
349 W
Описание
Insulated-gate bipolar transistor-FGB40N60SM: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.3 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
80 A
Power Dispation
349 W
Описание
Insulated-gate bipolar transistor-FGB40N60SM: Биполярный транзистор с изолированным затвором