FGB40T65SPD-F085
FGB40T65SPD-F085
Артикул:
FGB40T65SPD-F085
Описание:
FGB40T65SPD-F085
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
2.9 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
80 A
Power Dispation
267 W
Описание
Insulated-gate bipolar transistor-FGB40T65SPD-F085: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
2.9 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
80 A
Power Dispation
267 W
Описание
Insulated-gate bipolar transistor-FGB40T65SPD-F085: Биполярный транзистор с изолированным затвором