FGB7N60UNDF
FGB7N60UNDF
Артикул:
FGB7N60UNDF
Описание:
FGB7N60UNDF
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.1 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
14 A
Power Dispation
83 W
Описание
Insulated-gate bipolar transistor-FGB7N60UNDF: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.1 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
14 A
Power Dispation
83 W
Описание
Insulated-gate bipolar transistor-FGB7N60UNDF: Биполярный транзистор с изолированным затвором