FGD2736G3-F085
FGD2736G3-F085
Артикул:
FGD2736G3-F085
Описание:
FGD2736G3-F085
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
360 V
Collector-Emitter Saturation Voltage
1.45 V
Maximum Gate Emitter Voltage
14 V
Continuous Collector Current at 25 C
21 A
Power Dispation
150 W
Описание
Insulated-gate bipolar transistor-FGD2736G3-F085: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
360 V
Collector-Emitter Saturation Voltage
1.45 V
Maximum Gate Emitter Voltage
14 V
Continuous Collector Current at 25 C
21 A
Power Dispation
150 W
Описание
Insulated-gate bipolar transistor-FGD2736G3-F085: Биполярный транзистор с изолированным затвором