FGD3050G2
FGD3050G2
Артикул:
FGD3050G2
Описание:
FGD3050G2
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
500 V
Collector-Emitter Saturation Voltage
1.3 V
Maximum Gate Emitter Voltage
10 V
Continuous Collector Current at 25 C
27 A
Power Dispation
150 W
Описание
Insulated-gate bipolar transistor-FGD3050G2: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
500 V
Collector-Emitter Saturation Voltage
1.3 V
Maximum Gate Emitter Voltage
10 V
Continuous Collector Current at 25 C
27 A
Power Dispation
150 W
Описание
Insulated-gate bipolar transistor-FGD3050G2: Биполярный транзистор с изолированным затвором