FGD3325G2-F085
FGD3325G2-F085
Артикул:
FGD3325G2-F085
Описание:
FGD3325G2-F085
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
250 V
Collector-Emitter Saturation Voltage
1.68 V
Maximum Gate Emitter Voltage
10 V
Continuous Collector Current at 25 C
41 A
Power Dispation
150 W
Описание
Insulated-gate bipolar transistor-FGD3325G2-F085: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
250 V
Collector-Emitter Saturation Voltage
1.68 V
Maximum Gate Emitter Voltage
10 V
Continuous Collector Current at 25 C
41 A
Power Dispation
150 W
Описание
Insulated-gate bipolar transistor-FGD3325G2-F085: Биполярный транзистор с изолированным затвором