FGD3440G2-F085
FGD3440G2-F085
Артикул:
FGD3440G2-F085
Описание:
FGD3440G2-F085
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
400 V
Collector-Emitter Saturation Voltage
1.1 V
Maximum Gate Emitter Voltage
14 V
Continuous Collector Current at 25 C
26.9 A
Power Dispation
166 W
Описание
Insulated-gate bipolar transistor-FGD3440G2-F085: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
400 V
Collector-Emitter Saturation Voltage
1.1 V
Maximum Gate Emitter Voltage
14 V
Continuous Collector Current at 25 C
26.9 A
Power Dispation
166 W
Описание
Insulated-gate bipolar transistor-FGD3440G2-F085: Биполярный транзистор с изолированным затвором