FGD5T120SH
FGD5T120SH
Артикул:
FGD5T120SH
Описание:
FGD5T120SH
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2.9 V
Maximum Gate Emitter Voltage
25 V
Continuous Collector Current at 25 C
10 A
Power Dispation
69 W
Описание
Insulated-gate bipolar transistor-FGD5T120SH: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2.9 V
Maximum Gate Emitter Voltage
25 V
Continuous Collector Current at 25 C
10 A
Power Dispation
69 W
Описание
Insulated-gate bipolar transistor-FGD5T120SH: Биполярный транзистор с изолированным затвором