История:
S6B-SM-1L.M-2M25-PC
FGH15T120SMD-F155
FGH15T120SMD-F155
Артикул:
FGH15T120SMD-F155
Описание:
FGH15T120SMD-F155
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
1.9 V
Maximum Gate Emitter Voltage
25 V
Continuous Collector Current at 25 C
30 A
Power Dispation
333 W
Описание
Insulated-gate bipolar transistor-FGH15T120SMD-F155: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
1.9 V
Maximum Gate Emitter Voltage
25 V
Continuous Collector Current at 25 C
30 A
Power Dispation
333 W
Описание
Insulated-gate bipolar transistor-FGH15T120SMD-F155: Биполярный транзистор с изолированным затвором

