FGH25T120SMD-F155
FGH25T120SMD-F155
Артикул:
FGH25T120SMD-F155
Описание:
FGH25T120SMD-F155
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
1.9 V
Maximum Gate Emitter Voltage
25 V
Continuous Collector Current at 25 C
50 A
Power Dispation
428 W
Описание
Insulated-gate bipolar transistor-FGH25T120SMD-F155: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
1.9 V
Maximum Gate Emitter Voltage
25 V
Continuous Collector Current at 25 C
50 A
Power Dispation
428 W
Описание
Insulated-gate bipolar transistor-FGH25T120SMD-F155: Биполярный транзистор с изолированным затвором