История:
SP-M5A-03P-FF-SF7002
FGH30S130P
FGH30S130P
Артикул:
FGH30S130P
Описание:
FGH30S130P
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
1300 V
Collector-Emitter Saturation Voltage
1.9 V
Maximum Gate Emitter Voltage
25 V
Continuous Collector Current at 25 C
60 A
Power Dispation
500 W
Описание
Insulated-gate bipolar transistor-FGH30S130P: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
1300 V
Collector-Emitter Saturation Voltage
1.9 V
Maximum Gate Emitter Voltage
25 V
Continuous Collector Current at 25 C
60 A
Power Dispation
500 W
Описание
Insulated-gate bipolar transistor-FGH30S130P: Биполярный транзистор с изолированным затвором

