История:
10AX032E2F29E2SG
FGH30S130P
FGH30S130P
Артикул:
Описание:
FGH30S130P
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
1300 V
Collector-Emitter Saturation Voltage
1.9 V
Maximum Gate Emitter Voltage
25 V
Continuous Collector Current at 25 C
60 A
Power Dispation
500 W
Описание
Insulated-gate bipolar transistor-FGH30S130P: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
1300 V
Collector-Emitter Saturation Voltage
1.9 V
Maximum Gate Emitter Voltage
25 V
Continuous Collector Current at 25 C
60 A
Power Dispation
500 W
Описание
Insulated-gate bipolar transistor-FGH30S130P: Биполярный транзистор с изолированным затвором

