FGH30T65UPDT-F155
FGH30T65UPDT-F155
Артикул:
Описание:
FGH30T65UPDT-F155
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
2.1 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
60 A
Power Dispation
250 W
Описание
Insulated-gate bipolar transistor-FGH30T65UPDT-F155: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
2.1 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
60 A
Power Dispation
250 W
Описание
Insulated-gate bipolar transistor-FGH30T65UPDT-F155: Биполярный транзистор с изолированным затвором