История:
1.5FMCJ110C-W
FGH40N60SMD
FGH40N60SMD
Артикул:
Описание:
FGH40N60SMD
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Saturation Voltage
2.1 V
Continuous Collector Current at 25 C
80 A
Power Dispation
349 W
Описание
Insulated-gate bipolar transistor-FGH40N60SMD: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Saturation Voltage
2.1 V
Continuous Collector Current at 25 C
80 A
Power Dispation
349 W
Описание
Insulated-gate bipolar transistor-FGH40N60SMD: Биполярный транзистор с изолированным затвором

