История:
S6B-CC-1L.M-PG13.5
FGH40N60SMD
FGH40N60SMD
Артикул:
FGH40N60SMD
Описание:
FGH40N60SMD
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Saturation Voltage
2.1 V
Continuous Collector Current at 25 C
80 A
Power Dispation
349 W
Описание
Insulated-gate bipolar transistor-FGH40N60SMD: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Saturation Voltage
2.1 V
Continuous Collector Current at 25 C
80 A
Power Dispation
349 W
Описание
Insulated-gate bipolar transistor-FGH40N60SMD: Биполярный транзистор с изолированным затвором

