FGH40N60SMDF
FGH40N60SMDF
Артикул:
FGH40N60SMDF
Описание:
FGH40N60SMDF
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.9 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
80 A
Power Dispation
349 W
Описание
Insulated-gate bipolar transistor-FGH40N60SMDF: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.9 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
80 A
Power Dispation
349 W
Описание
Insulated-gate bipolar transistor-FGH40N60SMDF: Биполярный транзистор с изолированным затвором