FGH40N65UFDTU-F085
FGH40N65UFDTU-F085
Артикул:
FGH40N65UFDTU-F085
Описание:
FGH40N65UFDTU-F085
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.8 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
80 A
Power Dispation
290 W
Описание
Insulated-gate bipolar transistor-FGH40N65UFDTU-F085: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.8 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
80 A
Power Dispation
290 W
Описание
Insulated-gate bipolar transistor-FGH40N65UFDTU-F085: Биполярный транзистор с изолированным затвором