FGH40T100SMD
FGH40T100SMD
Артикул:
FGH40T100SMD
Описание:
FGH40T100SMD
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
1000 V
Collector-Emitter Saturation Voltage
2.3 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
80 A
Power Dispation
333 W
Описание
Insulated-gate bipolar transistor-FGH40T100SMD: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
1000 V
Collector-Emitter Saturation Voltage
2.3 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
80 A
Power Dispation
333 W
Описание
Insulated-gate bipolar transistor-FGH40T100SMD: Биполярный транзистор с изолированным затвором