FGH40T120SMD
FGH40T120SMD
Артикул:
FGH40T120SMD
Описание:
FGH40T120SMD
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
1.8 V
Maximum Gate Emitter Voltage
25 V
Continuous Collector Current at 25 C
80 A
Power Dispation
555 W
Описание
Insulated-gate bipolar transistor-FGH40T120SMD: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
1.8 V
Maximum Gate Emitter Voltage
25 V
Continuous Collector Current at 25 C
80 A
Power Dispation
555 W
Описание
Insulated-gate bipolar transistor-FGH40T120SMD: Биполярный транзистор с изолированным затвором