FGH40T120SQDNL4
FGH40T120SQDNL4
Артикул:
FGH40T120SQDNL4
Описание:
FGH40T120SQDNL4
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
1.78 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
160 A
Power Dispation
454 W
Описание
Insulated-gate bipolar transistor-FGH40T120SQDNL4: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
1.78 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
160 A
Power Dispation
454 W
Описание
Insulated-gate bipolar transistor-FGH40T120SQDNL4: Биполярный транзистор с изолированным затвором