FGH50N3
FGH50N3
Артикул:
FGH50N3
Описание:
FGH50N3
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
300 V
Collector-Emitter Saturation Voltage
1.3 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
75 A
Power Dispation
463 W
Описание
Insulated-gate bipolar transistor-FGH50N3: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
300 V
Collector-Emitter Saturation Voltage
1.3 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
75 A
Power Dispation
463 W
Описание
Insulated-gate bipolar transistor-FGH50N3: Биполярный транзистор с изолированным затвором