FGH50T65SQD-F155
FGH50T65SQD-F155
Артикул:
FGH50T65SQD-F155
Описание:
FGH50T65SQD-F155
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.6 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
100 A
Power Dispation
268 W
Описание
Insulated-gate bipolar transistor-FGH50T65SQD-F155: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.6 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
100 A
Power Dispation
268 W
Описание
Insulated-gate bipolar transistor-FGH50T65SQD-F155: Биполярный транзистор с изолированным затвором