FGH50T65UPD
FGH50T65UPD
Артикул:
FGH50T65UPD
Описание:
FGH50T65UPD
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
2.1 V
Maximum Gate Emitter Voltage
25 V
Continuous Collector Current at 25 C
100 A
Power Dispation
240 W
Описание
Insulated-gate bipolar transistor-FGH50T65UPD: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
2.1 V
Maximum Gate Emitter Voltage
25 V
Continuous Collector Current at 25 C
100 A
Power Dispation
240 W
Описание
Insulated-gate bipolar transistor-FGH50T65UPD: Биполярный транзистор с изолированным затвором