FGH60N60SFDTU-F085
FGH60N60SFDTU-F085
Артикул:
FGH60N60SFDTU-F085
Описание:
FGH60N60SFDTU-F085
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.2 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
120 A
Power Dispation
378 W
Описание
Insulated-gate bipolar transistor-FGH60N60SFDTU-F085: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.2 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
120 A
Power Dispation
378 W
Описание
Insulated-gate bipolar transistor-FGH60N60SFDTU-F085: Биполярный транзистор с изолированным затвором