История:
S16B-CCH-1L.M-M40
HEC-RW-RLB-R
HEB-AW-RLC-B
FGH75T65SQDNL4
FGH75T65SQDNL4
Артикул:
FGH75T65SQDNL4
Описание:
FGH75T65SQDNL4
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.43 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
200 A
Power Dispation
375 W
Описание
Insulated-gate bipolar transistor-FGH75T65SQDNL4: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.43 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
200 A
Power Dispation
375 W
Описание
Insulated-gate bipolar transistor-FGH75T65SQDNL4: Биполярный транзистор с изолированным затвором

