История:
LS1017AXE7HNA
MAA400-1S48SDP
FGH75T65SQDTL4
FGH75T65SQDTL4
Артикул:
Описание:
FGH75T65SQDTL4
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.6 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
150 A
Power Dispation
375 W
Описание
Insulated-gate bipolar transistor-FGH75T65SQDTL4: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.6 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
150 A
Power Dispation
375 W
Описание
Insulated-gate bipolar transistor-FGH75T65SQDTL4: Биполярный транзистор с изолированным затвором

