FGH75T65UPD
FGH75T65UPD
Артикул:
FGH75T65UPD
Описание:
FGH75T65UPD
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
2.3 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
150 A
Power Dispation
187 W
Описание
Insulated-gate bipolar transistor-FGH75T65UPD: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
2.3 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
150 A
Power Dispation
187 W
Описание
Insulated-gate bipolar transistor-FGH75T65UPD: Биполярный транзистор с изолированным затвором