FGH75T65UPD-F085
FGH75T65UPD-F085
Артикул:
Описание:
FGH75T65UPD-F085
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
2.21 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
150 A
Power Dispation
375 W
Описание
Insulated-gate bipolar transistor-FGH75T65UPD-F085: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
2.21 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
150 A
Power Dispation
375 W
Описание
Insulated-gate bipolar transistor-FGH75T65UPD-F085: Биполярный транзистор с изолированным затвором