История:
LS1017AXE7HNA
MAA400-1S48SDP
FGHL40S65UQ
FGHL40S65UQ
Артикул:
Описание:
FGHL40S65UQ
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.35 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
40 A
Power Dispation
231 W
Описание
Insulated-gate bipolar transistor-FGHL40S65UQ: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.35 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
40 A
Power Dispation
231 W
Описание
Insulated-gate bipolar transistor-FGHL40S65UQ: Биполярный транзистор с изолированным затвором

