История:
S16B-CCH-1L.M-M40
HEC-RW-RLB-R
HEB-AW-RLC-B
FGHL40S65UQ
FGHL40S65UQ
Артикул:
FGHL40S65UQ
Описание:
FGHL40S65UQ
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.35 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
40 A
Power Dispation
231 W
Описание
Insulated-gate bipolar transistor-FGHL40S65UQ: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.35 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
40 A
Power Dispation
231 W
Описание
Insulated-gate bipolar transistor-FGHL40S65UQ: Биполярный транзистор с изолированным затвором

