FGHL50T65SQ
FGHL50T65SQ
Артикул:
FGHL50T65SQ
Описание:
FGHL50T65SQ
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.6 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
100 A
Power Dispation
268 W
Описание
Insulated-gate bipolar transistor-FGHL50T65SQ: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.6 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
100 A
Power Dispation
268 W
Описание
Insulated-gate bipolar transistor-FGHL50T65SQ: Биполярный транзистор с изолированным затвором