FGP15N60UNDF
FGP15N60UNDF
Артикул:
FGP15N60UNDF
Описание:
FGP15N60UNDF
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.7 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
30 A
Power Dispation
178 W
Описание
Insulated-gate bipolar transistor-FGP15N60UNDF: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.7 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
30 A
Power Dispation
178 W
Описание
Insulated-gate bipolar transistor-FGP15N60UNDF: Биполярный транзистор с изолированным затвором