FGP3440G2-F085
FGP3440G2-F085
Артикул:
Описание:
FGP3440G2-F085
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
400 V
Collector-Emitter Saturation Voltage
1.6 V
Maximum Gate Emitter Voltage
10 V
Continuous Collector Current at 25 C
26.9 A
Power Dispation
166 W
Описание
Insulated-gate bipolar transistor-FGP3440G2-F085: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
400 V
Collector-Emitter Saturation Voltage
1.6 V
Maximum Gate Emitter Voltage
10 V
Continuous Collector Current at 25 C
26.9 A
Power Dispation
166 W
Описание
Insulated-gate bipolar transistor-FGP3440G2-F085: Биполярный транзистор с изолированным затвором