FGP5N60LS
FGP5N60LS
Артикул:
FGP5N60LS
Описание:
FGP5N60LS
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.8 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
10 A
Power Dispation
83 W
Описание
Insulated-gate bipolar transistor-FGP5N60LS: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.8 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
10 A
Power Dispation
83 W
Описание
Insulated-gate bipolar transistor-FGP5N60LS: Биполярный транзистор с изолированным затвором