История:
PASH-M12A-04P-FF-SL7002
P2300EALRP2
TR2/TCP500-R
S32B-SM-1L.M-2M32
TISP4125M3AJR-S
D3A-SF-1L-PG13.5
D3A-CCT-1L-PG11
PTGL04AS100K2B51B0
D3A-CCT-1L-M20
MAA400-1C24SDP
MAA400-1S24SDP
015401.6DRL
MAA400-1S48SDP
IXA30PG1200DHG-TUB
MAA800-1C24SDP
MAA400-1S15SDP
MAA400-1S28SDP
PTGL04AS560K6B51B0
0154005.DRT
0154007.DRL
FGPF10N60UNDF
FGPF10N60UNDF
Артикул:
FGPF10N60UNDF
Описание:
FGPF10N60UNDF
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2 V
Continuous Collector Current at 25 C
20 A
Power Dispation
17 W
Описание
Insulated-gate bipolar transistor-FGPF10N60UNDF: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2 V
Continuous Collector Current at 25 C
20 A
Power Dispation
17 W
Описание
Insulated-gate bipolar transistor-FGPF10N60UNDF: Биполярный транзистор с изолированным затвором

