FGPF10N60UNDF
FGPF10N60UNDF
Артикул:
Описание:
FGPF10N60UNDF
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2 V
Continuous Collector Current at 25 C
20 A
Power Dispation
17 W
Описание
Insulated-gate bipolar transistor-FGPF10N60UNDF: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2 V
Continuous Collector Current at 25 C
20 A
Power Dispation
17 W
Описание
Insulated-gate bipolar transistor-FGPF10N60UNDF: Биполярный транзистор с изолированным затвором