FGY100T65SCDT
FGY100T65SCDT
Артикул:
FGY100T65SCDT
Описание:
FGY100T65SCDT
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.5 V
Maximum Gate Emitter Voltage
25 V
Continuous Collector Current at 25 C
200 A
Power Dispation
750 W
Описание
Insulated-gate bipolar transistor-FGY100T65SCDT: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.5 V
Maximum Gate Emitter Voltage
25 V
Continuous Collector Current at 25 C
200 A
Power Dispation
750 W
Описание
Insulated-gate bipolar transistor-FGY100T65SCDT: Биполярный транзистор с изолированным затвором