FGY120T65SPD-F085
FGY120T65SPD-F085
Артикул:
Описание:
FGY120T65SPD-F085
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.5 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
240 A
Power Dispation
882 W
Описание
Insulated-gate bipolar transistor-FGY120T65SPD-F085: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.5 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
240 A
Power Dispation
882 W
Описание
Insulated-gate bipolar transistor-FGY120T65SPD-F085: Биполярный транзистор с изолированным затвором