FGY40T120SMD
FGY40T120SMD
Артикул:
FGY40T120SMD
Описание:
FGY40T120SMD
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
80 A
Power Dispation
882 W
Описание
Insulated-gate bipolar transistor-FGY40T120SMD: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
80 A
Power Dispation
882 W
Описание
Insulated-gate bipolar transistor-FGY40T120SMD: Биполярный транзистор с изолированным затвором