FGY75T120SQDN
FGY75T120SQDN
Артикул:
FGY75T120SQDN
Описание:
FGY75T120SQDN
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
1.7 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
150 A
Power Dispation
790 W
Описание
Insulated-gate bipolar transistor-FGY75T120SQDN: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
1.7 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
150 A
Power Dispation
790 W
Описание
Insulated-gate bipolar transistor-FGY75T120SQDN: Биполярный транзистор с изолированным затвором