FGY75T95SQDT
FGY75T95SQDT
Артикул:
FGY75T95SQDT
Описание:
FGY75T95SQDT
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
950 V
Collector-Emitter Saturation Voltage
1.69 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
75 A
Power Dispation
434 W
Описание
Insulated-gate bipolar transistor-FGY75T95SQDT: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
950 V
Collector-Emitter Saturation Voltage
1.69 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
75 A
Power Dispation
434 W
Описание
Insulated-gate bipolar transistor-FGY75T95SQDT: Биполярный транзистор с изолированным затвором