FII30-06D
FII30-06D
Артикул:
Описание:
FII30-06D
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.9 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
30 A
Power Dispation
100 W
Описание
Insulated-gate bipolar transistor-FII30-06D: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.9 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
30 A
Power Dispation
100 W
Описание
Insulated-gate bipolar transistor-FII30-06D: Биполярный транзистор с изолированным затвором