HGT1S10N120BNST
HGT1S10N120BNST
Артикул:
HGT1S10N120BNST
Описание:
HGT1S10N120BNST
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2.7 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
35 A
Power Dispation
298 W
Описание
Insulated-gate bipolar transistor-HGT1S10N120BNST: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2.7 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
35 A
Power Dispation
298 W
Описание
Insulated-gate bipolar transistor-HGT1S10N120BNST: Биполярный транзистор с изолированным затвором