HGTD1N120BNS9A
HGTD1N120BNS9A
Артикул:
HGTD1N120BNS9A
Описание:
HGTD1N120BNS9A
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2.5 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
5.3 A
Power Dispation
60 W
Описание
Insulated-gate bipolar transistor-HGTD1N120BNS9A: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2.5 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
5.3 A
Power Dispation
60 W
Описание
Insulated-gate bipolar transistor-HGTD1N120BNS9A: Биполярный транзистор с изолированным затвором