HGTG11N120CND
HGTG11N120CND
Артикул:
HGTG11N120CND
Описание:
HGTG11N120CND
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2.1 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
43 A
Power Dispation
298 W
Описание
Insulated-gate bipolar transistor-HGTG11N120CND: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2.1 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
43 A
Power Dispation
298 W
Описание
Insulated-gate bipolar transistor-HGTG11N120CND: Биполярный транзистор с изолированным затвором