HGTG18N120BND
HGTG18N120BND
Артикул:
HGTG18N120BND
Описание:
HGTG18N120BND
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2.45 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
54 A
Power Dispation
390 W
Описание
Insulated-gate bipolar transistor-HGTG18N120BND: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2.45 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
54 A
Power Dispation
390 W
Описание
Insulated-gate bipolar transistor-HGTG18N120BND: Биполярный транзистор с изолированным затвором