HGTG20N60B3D
HGTG20N60B3D
Артикул:
HGTG20N60B3D
Описание:
HGTG20N60B3D
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.8 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
20 A
Power Dispation
165 W
Описание
Insulated-gate bipolar transistor-HGTG20N60B3D: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.8 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
20 A
Power Dispation
165 W
Описание
Insulated-gate bipolar transistor-HGTG20N60B3D: Биполярный транзистор с изолированным затвором