HGTG30N60A4D
HGTG30N60A4D
Артикул:
HGTG30N60A4D
Описание:
HGTG30N60A4D
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.8 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
75 A
Power Dispation
463 W
Описание
Insulated-gate bipolar transistor-HGTG30N60A4D: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.8 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
75 A
Power Dispation
463 W
Описание
Insulated-gate bipolar transistor-HGTG30N60A4D: Биполярный транзистор с изолированным затвором