HGTG30N60B3D
HGTG30N60B3D
Артикул:
HGTG30N60B3D
Описание:
HGTG30N60B3D
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.45 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
60 A
Power Dispation
208 W
Описание
Insulated-gate bipolar transistor-HGTG30N60B3D: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.45 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
60 A
Power Dispation
208 W
Описание
Insulated-gate bipolar transistor-HGTG30N60B3D: Биполярный транзистор с изолированным затвором