HGTP12N60C3D
HGTP12N60C3D
Артикул:
HGTP12N60C3D
Описание:
HGTP12N60C3D
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.65 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
24 A
Power Dispation
104 W
Описание
Insulated-gate bipolar transistor-HGTP12N60C3D: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.65 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
24 A
Power Dispation
104 W
Описание
Insulated-gate bipolar transistor-HGTP12N60C3D: Биполярный транзистор с изолированным затвором