IEWS20R5135IPBXKMA1
IEWS20R5135IPBXKMA1
Артикул:
IEWS20R5135IPBXKMA1
Описание:
IEWS20R5135IPBXKMA1
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
1350 V
Collector-Emitter Saturation Voltage
1.65 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
40 A
Power Dispation
288 W
Описание
Insulated-gate bipolar transistor-IEWS20R5135IPBXKMA1: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
1350 V
Collector-Emitter Saturation Voltage
1.65 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
40 A
Power Dispation
288 W
Описание
Insulated-gate bipolar transistor-IEWS20R5135IPBXKMA1: Биполярный транзистор с изолированным затвором