IGB15N60T
IGB15N60T
Артикул:
Описание:
IGB15N60T
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.5 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
26 A
Power Dispation
130 W
Описание
Insulated-gate bipolar transistor-IGB15N60T: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.5 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
26 A
Power Dispation
130 W
Описание
Insulated-gate bipolar transistor-IGB15N60T: Биполярный транзистор с изолированным затвором