IGB20N60H3
IGB20N60H3
Артикул:
IGB20N60H3
Описание:
IGB20N60H3
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.95 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
40 A
Power Dispation
170 W
Описание
Insulated-gate bipolar transistor-IGB20N60H3: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.95 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
40 A
Power Dispation
170 W
Описание
Insulated-gate bipolar transistor-IGB20N60H3: Биполярный транзистор с изолированным затвором