IGB50N60T
IGB50N60T
Артикул:
IGB50N60T
Описание:
IGB50N60T
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.5 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
90 A
Power Dispation
333 W
Описание
Insulated-gate bipolar transistor-IGB50N60T: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.5 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
90 A
Power Dispation
333 W
Описание
Insulated-gate bipolar transistor-IGB50N60T: Биполярный транзистор с изолированным затвором